We demonstrate a high performance implant-free n-type In_(0.7)Ga_(0.3)As channel MOSFET with a 4-nm InP barrier layer fabricated on a semi-insulating substrate employing a 10-nm Al_(2)O_(3) as gate dielectric.The maximum effective channel mobility is 1862 cm^(2)/V·s extracted by the split C–V method.Devices with 0.8μm gate length exhibit a peak extrinsic transconductance of 85 mS/mm and a drive current of more than 200 mA/mm.A short-circuit current gain cutoff frequency f_(T) of 24.5 GHz and a maximum oscillation frequency f_(max) of 54 GHz are achieved for the 0.8μm gate-length device.The research is helpful to obtain higher performance In_(0.7)Ga_(0.3)As MOSFETs for radio-frequency applications.
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