We systematically investigate the resistive switching characteristics of SiO_(2) films with a Cu/SiO_(2)/Cu/SiO_(2)/Pt multilayer structure.The device exhibits good resistive switching performances,including a high ON/OFF resistance ratio(>103),good retention characteristic(>10^(4)s),satisfactory switching endurance(>200 cycles),a fast programming speed(<100 ns)and a high device yield(∼100%).Considering these results,SiO_(2)-based memories have highly promising applications for nonvolatile memory devices.
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