Raman Scattering Study of PbSe Grown on(111)BaF_(2) Substrate

杨爱龄; 吴惠桢; 李志锋; 邱东江; 常勇; 李剑锋; P.J.McCann; X.M.Fang

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Raman Scattering Study of PbSe Grown on(111)BaF_(2) Substrate

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PbSe films were grown on(111)-oriented BaF_(2)substrates by using molecular beam epitaxy.High resolution x-ray diffraction characterization showed good crystalline quality of PbSe films.Both longitudinal optical phonon at 135cm^(-1)and transverse optical phonon at 47.6cm-1 were observed by Raman scattering measurements.The Raman tensor calculation demonstrates that both transverse-optical and longitudinal-optical(LO)phonons in PbSe crystal are Raman active on(111)-oriented surface,Furthermore,2LO phonon at about 270cm^(-1)and polaron at about 800cm^(-1)in PbSe,were also observed.The observed Raman frequencies are in good agreement with theoretical calculations using point ion model.

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《中国物理快报：英文版》 |2000年第8期|606-608|共3页
作者
杨爱龄; 吴惠桢; 李志锋; 邱东江; 常勇; 李剑锋; P.J.McCann; X.M.Fang;
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作者单位

Department of Information Science and Electronic Engineering;

Department of Physics;

Zhejiang University;

Hangzhou 310028;

Shanghai Institute of Technical Physics;

Chinese Academy of Sciences;

Shanghai 200083;

The University of Oklahoma;

Norman;

Oklahoma;

73019-23;

USA;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
scattering; transverse; phonon;

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Raman Scattering Study of PbSe Grown on(111)BaF_(2) Substrate

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