首页> 中文期刊> 《中国物理快报:英文版》 >High-Pressure Preparation of High-Density Cu_2ZnSnS_4 Materials

High-Pressure Preparation of High-Density Cu_2ZnSnS_4 Materials

         

摘要

High-density Cu_2ZnSnS_4(CZTS) materials are prepared via the mechanical alloying and high pressure sintering method using Cu_2S,ZnS and SnS_2 as the raw materiais.The morphological,structural,compositional and eiectricai properties of the materials are investigated by using x-ray diffraction,scanning electron microscopy,and energy dispersive x-ray spectroscopy,as well as by the Raman scattering and the Hall Effect measurements.The CZTS synthesized under 5 GPa and 800℃ shows a p-type conductivity,with a resistivity of 9.69 × 10^(-2)Ω·cm and a carrier concentration of 1.45 × 10^(20) cm^(-3).It is contributed to by the large grains in the materials reducing the grain boundaries,thus effectively reducing the recombination of the charge carriers.

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