首页> 中文期刊> 《中国物理快报:英文版》 >Measurement of ZnO/Al_(2)O_(3) Heterojunction Band Offsets by in situ X-Ray Photoelectron Spectroscopy

Measurement of ZnO/Al_(2)O_(3) Heterojunction Band Offsets by in situ X-Ray Photoelectron Spectroscopy

         

摘要

ZnO films are grown on c-sapphire substrates by laser molecular beam epitaxy.The band offsets of the ZnO/Al_(2)O_(3) heterojunction are studied by in situ x-ray photoelectron spectroscopy.The valence band of Al_(2)O_(3) is found to be 3.59±0.05 eV below that of ZnO.Together with the resulting conduction band offset of 2.04±0.05 eV,this indicates that a type-I staggered band line exists at the ZnO/Al_(2)O_(3) heterojunction.

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