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Room-Temperature Growth of A1 Films on Si(111)-7×7 Surface

         

摘要

Reflection high energy electron diffraction and scanning tunnelling microscopy (STM) are used to investigate the structure and morphology of AI films deposited on Si(111)-7×7 surface at room temperature. The films are polycrystalline, made up of (100) and (111) oriented islands, which primarily result from the interface elastic effect and free surface energies of the AI (100) and (111) surfaces.

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