首页> 中文期刊> 《中国物理快报:英文版》 >The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO_(2) with H_(2)O Molecule Adsorption

The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO_(2) with H_(2)O Molecule Adsorption

         

摘要

The atomic and electronic structures of AB-stacking bilayer graphene(BLG)in the presence of H_(2)O molecules are investigated by density functional theory calculations.For free-standing BLG,the bandgap is opened to 0.101 eV with a single H_(2)O molecule adsorbed on its surface.The perfectly suspended BLG is sensitive to H_(2)O adsorbates,which break the BLG lattice symmetry and open an energy gap.While a single H_(2)O molecule is adsorbed on the BLG surface with a SiO2 substrate,the bandgap widens to 0.363 eV.Both the H_(2)O molecule adsorption and the oxide substrate contribute to the BLG bandgap opening.The phenomenon is interpreted with the charge transfer process in 2D carbon nanostructures.

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