Si^+ ions of 350keV have been implanted into AlGaAs/AlGaInAs quantum well samples in the dose range from 5×10^13cm^-2 to 5×10^14cm^-2.The Raman spectra and high resolution x-ray diffraction (HRXRD) were measured from these implanted samples as well as the non-implanted sample.In the implanted layers the average strain which was evaluated by HRXRD increases with the implantation doses and varies from 0.0011 to 0.0029.The quantum well interface intermixing effect and compositional modification are also observed from HRXRD.At the higher doses,an abnormal annealing procedure takes place and it partly removes damage,but the strain remains almost unchanged in the epilayers.
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