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程伟; 金智; 苏永波; 刘新宇; 徐安怀; 齐鸣;
Institute of Microelectronics;
Chinese Academy of Sciences;
Beijing 100029;
Shanghai Institute of Microsystem and Information Technology;
Shanghai 200050;
双异质结双极晶体管; 截止频率; 电流增益; 磷化铟; 千兆赫; 铟镓砷; 集电极; InGaAsP;
机译:Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor
机译:InP/InGaAs double heterostructure bipolar transistors grown by MBE
机译:High-Bitrate-Measurement-System-Oriented Lower-Jitter 113-Gbit/s 2:1 Multiplexer and 1:2 Demultiplexer Modules Using 1-μm InP/InGaAs/InP Double Heterojunction Bipolar Transistors
机译:200GHz Sig E hetero bipolar transistor design
机译:基于250 nm InP / InGaAs / InP DHBT工艺的140-220 GHz成像前端
机译:在sub 1-x Ga sub x as sub y p sub 1-y-Inp Double-Heterostructure Lasers中。
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