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《中国物理快报：英文版》
>Structural, Ferroelectric, Dielectric Properties and Leakage Characteristics of Neodymium－Doped Bi4Ti3O12 Thin Films Prepared by Metalorganic Deposition Method
Structural, Ferroelectric, Dielectric Properties and Leakage Characteristics of Neodymium－Doped Bi4Ti3O12 Thin Films Prepared by Metalorganic Deposition Method
Thin films of Nd^3+-substituted Bi3.15Nd0.85Ti3O12 (BNT) were fabricated on the (111)Pt/TiO2/SiO2/Si substrates by a metalorganic deposition (MOD) technique. These thin films are possessed of a single-phase bismuthlayered structure showing the preferred (001) and (117) orientation. The values of the remanent polarization Prand coercive field Ec of the BNT thin film are 27μC/cm^2 and 157kV/cm, respectively. The results of fatigue and retention tests revealed that the BNT thin film was not fatigued up to 1.44 × 10^10 switching cycles and the retained charge was unchanged after 1 × 10^5 s. The leakage current behaviour of the BNT thin film was investigated at room temperature and their conduction mechanisms were also discussed. The I-V characteristics of the film show the ohmic behaviour for applied field lower than 40 k V/cm. Nonlinearity in the I-V behaviour was observed at an applied field above 40kV/cm. In the high field region (E > 95 kV/cm) the sample shows Schottky emission.
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机译：Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition
