Growth and Photoluminescence of Epitaxial CeO_(2) Film on Si (111) Substrate

高斐; 李国华; 张建辉; 秦复光; 姚振钰; 刘志凯; 王占国; 林兰英

首页> 中文期刊> 《中国物理快报：英文版》 >Growth and Photoluminescence of Epitaxial CeO_(2) Film on Si (111) Substrate

Growth and Photoluminescence of Epitaxial CeO_(2) Film on Si (111) Substrate

开具论文收录证明 >>

期刊封面封底目录下载 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

CeO_(2) film with a thickness of about 80 nm was deposited by a mass-analyzed low-energy dual ion beams deposition technique on Si(111)substrate.Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal.The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurement,indicating that stoichiometric CeO_(2) was formed.Violet/blue light emission(379.5 nm)was observed at room temperature,which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO_(2).

著录项

来源
《中国物理快报：英文版》 |2001年第3期|443-444|共2页
作者
高斐; 李国华; 张建辉; 秦复光; 姚振钰; 刘志凯; 王占国; 林兰英;
展开▼
作者单位

Laboratory of Semiconductor Materials Science;

Institute of Semiconductors;

Chinese Academy of Sciences;

Beijing 100083;

National Laboratory for Superlattices and Microstructures;

Institute of Semiconductors;

Chinese Academy of Sciences;

Beijing 100083;

展开▼
原文格式 PDF
正文语种 chi
中图分类固体物理学;
关键词
film; transitions; tentative;

相似文献

中文文献
外文文献
专利

1. Thermal stability of Mg_2 Si epitaxial film formed on Si(111) substrate by solid phase reaction [J] . 王喜娜 ,王勇 ,邹进 . 中国物理：英文版 . 2009,第7期
2. Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates [J] . 康琳 ,高炬 ,许华荣 . 中国物理快报：英文版 . 2007,第12期
3. Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si(111) substrate [J] . 赵丹梅 ,赵德刚 ,江德生 . 中国物理：英文版 . 2015,第10期
4. In situ photoemission study of interface and film formation during epitaxial growth of Er_2O_3 film on Si(001) substrate [J] . 朱燕艳 ,方泽波 ,刘永生 . 中国稀土学报：英文版 . 2008,第6期
5. Microstructure of Epitaxial Er2O3 Thin Film on Oxidized Si （111） Substrate [J] . 薛宪营 ,王玉柱 ,贾全杰 . 中国物理快报：英文版 . 2007,第6期
6. Interface morphologicS in strained Si1-xGex／Si multi1ayers on vicinal Si（111） substrates probed by grazing-angle x-ray scattering [C] . . 第七届全国X射线衍射学术会议 . 1998
7. ASSEMBLY OF(SMALL ANIONS/LAYERED DOULE HYDROXIDES)n UTFs LUMINESCENT ULTRATHIN FILMS,ITS ENHANCED PHOTOLUMINESCENCE AND FLUORESCENT BIOSENSOR APPLICATION [A] . Muhammad Sohail Haroone . 2019

Growth and Photoluminescence of Epitaxial CeO_(2) Film on Si (111) Substrate

摘要

著录项

相似文献

相关主题

期刊订阅