Diamond films of various thickness(1-300μm)were deposited on single-crystal Si active(300μm)by a microwave plasma chemical vapor deposition method using gaseous mixtures of methane and hydrogen.After thinning of the Si layer by machine and ion-beam polishing a diamond-based silicon-on-insulator structure with final Si layer thickness of about 1μm is formed.Thermal conductivity of this structure material with various thicknesses of diamond and Si layer was measured.Compared with bulk silicon,the thermal conductivity of the siliconon-diamond structure with 300μm diamond and 1μm silicon increases by 850%.
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机译：Thermal Conductivity and Thermal Diffusivity of Tremolite at High Temperature and Pressure and Implications for the Thermal Structure of the Venusian Lithosphere
机译：study on the measurement of physical properties in the metal powder for Rapid prototyping: proposal of the measurement of Thermal Conductivity and absorption of Laser Beam
