Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al_(2)O_(3) as the top−gate dielectric.The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate.The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found.For the intrinsic characteristic of this particular channel material,the devices cannot be switched off.The cut-off frequencies of these graphene field-effect transistors,which have a gate length of 1µm,are larger than 800 MHz.The largest one can reach 1.24 GHz.There are greater than 95% active devices that can be successfully applied.We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors,which paves the way for high-performance graphene devices and circuits.
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机译：alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability
