A series of organic light-emitting diodes(OLEDs)have been fabricated with different thicknesses of the tin(Sn)layer.The structure of the devices is indium-tin oxide(ITO)/copper phthalocyanine(CuPc)(12nm)N/N'-diphenyl-N,N'bis(1-naphthyl)-(1,1'0biphenyl)-4,4'-diamine(NPB)(60nm)/tris-(8-hydroxyquinoline)aluminum(Alq3) (60nm)/Sn/aluminium(Al(120nm).It is found that compared to OLEDs with only an Al cathode,both the electron injection efficiency and electroluminescence are improved when the thickness of the Sn layer is properly chsen.The maximum efficiency and brightness of the devices with Sn(2.1nm)/Al and Al cathode are 0.54lm/W and 9800cd/m^2,and 0.2561m/W and 3000cd/m^2,repectively.One possible explanatioin to this phenomenon is that the enhancement of the electron density of the Sn layer due to the electron transfer from the Al to the Sn layer leads to the improvement of the electron injection efficiency and electroluminescence.
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机译：Thermal management and Interfacial properties in High-power GaN-Based Light-Emitting Diodes Employing Diamond-added sn-3 wt.%ag-0.5 wt.%Cu solder as a Die-attach material
