A systematic study of the charge transport and electrical properties in poly(3-hexylthiophene) (P3HT) polymer layers is performed.We demonstrate that the temperature-dependent current-voltage J (V,T) characteristics of hole-only devices based on P3HT can be accurately described using the recently introduced extended Gaussian disorder model (EGDM).A particular numerical method adopting the uneven discretization and Newton iteration method is used to solve the coupled equations describing the space-charge limited (SCL) current in conjugated polymers.For the polymer studied,we find the width of the density of states σ =0.1 eV and the lattice constant a =1.15nm.Based on the numerical method and EGDM,we further calculate and analyze some important electrical properties for P3HT in detail,including the variation of current-voltage characteristics with the boundary carrier density and the distribution of charge-carrier density and electric field with the distance from interface.
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机译：Electrical properties of inverted poly(3-hexylthiophene): Methano-fullerene 6,6-phenyl C_(71)-butyric acid methyl ester bulk hetero-junction solar cell with Cs_2CO_3 and MoO_3 layers
机译：Effect of Varying Thiophene Units on Charge- Transport and Photovoltaic Properties of Poly(phenylene ethynylene)- alt -poly(phenylene vinylene) Polymers
