首页> 中文期刊> 《中国物理快报:英文版》 >Characterization of Femtosecond Low—Temperature—Grown GaAs Photoconductive Switch

Characterization of Femtosecond Low—Temperature—Grown GaAs Photoconductive Switch

         

摘要

A photoconductive response time,as short as 350fs,of a low-temperature-grown GaAs(LT-GaAs) micro-coplanar photoconductive switch has been measured and modelled to the ultrafast trapping of the photoexcited carriers in LT-GaAs.The coherent interference of the pump and probe pulses results in a narrow spike photocurrent autocorrelation signal which maps the femtosecond optical pulses.

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