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Binding Energy of Biexcitons in Two-Dimensional Semiconductors

         

摘要

The binding energies of a two-dimensional(2D)biexciton have been calculated variationally for all values of the effective electron-to-hole mass ratio u by using a three-parameter wave function.The ratio of the binding energy of a 2D biexciton to that of a 2D exciton is found to be from 0.582 to 0.220.The results agree fairly well with previous experimental results.The results of this approach are compared with those of earlier theories.

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