A Novel Coupled Quantum Well Structure with Low-Driving Voltage, Low Absorption Loss and Large Field-Induced Refractive Index Change

徐枝新; 江晓清; 徐义刚; 杨爱龄; 王明华; 周强; 李锡华; 杨建义

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A Novel Coupled Quantum Well Structure with Low-Driving Voltage, Low Absorption Loss and Large Field-Induced Refractive Index Change

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Based on a two-energy-level system, we analyse the changing ground eigenenergies of symmetric CaAs/Alx Ca1-x As coupled quantum wells in the presence of an applied electric field. From the theoretical analysis for symmetric coupled quantum well, we find the advantages and disadvantages when it is applied to travelling wave modulator.Hence the conception of quasi-symmetric coupled quantum wells is put forward. Based on the demands of travelling wave modulator for quantum well materials, the configuration of quasi-symmetric coupled quantum well is further optimized. Consequently, in the case of low applied electric field (F=20 kV/cm) and low absorption loss (α≤100cm^-1), a large field-induced refractive change △n (for TE mode, △n = 0.021; for TM mode, △n=0.0121) is attained in the optimized coupled quantum well.

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《中国物理快报：英文版》 |2005年第4期|956-959|共4页
作者
徐枝新; 江晓清; 徐义刚; 杨爱龄; 王明华; 周强; 李锡华; 杨建义;
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作者单位

DepartmentofInformationScienceandElectronicEngineering;

ZhejiangUniversity;

Hangzhou310027//CollegeofSciences;

ZhejiangUniversityofScienceandTechnology;

Hangzhou310023;

DepartmentofInformationScienceandElectronicEngineering;

ZhejiangUniversity;

Hangzhou310027;

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原文格式 PDF
正文语种 chi
中图分类半导体量子理论;
关键词
耦合结构; 量子井; 低压驱动; 吸收损失; 人造折射指数; 半导体;

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A Novel Coupled Quantum Well Structure with Low-Driving Voltage, Low Absorption Loss and Large Field-Induced Refractive Index Change

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