By means of optimization with a multilayer model,the damage profile can be obtained from the measured data by spectroscopic ellipsometry without stripping.The damage profiles of 40keV As+implanted Si at doses of 4 x 1013 and 1.4 x 1014 ions cm-2 are shown and compared with those determined by Rutherford backscattering.
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机译：Electrical and ellipsometric characterization of the removal of silicon surface damage and contamination resulting from ion beam and plasma processing
