• 主题
高级搜索  >
历史搜索 清空历史
首页> 中文期刊> 《中国物理快报：英文版》 >Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET

Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET

         
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOl) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have been studied with three different nitrogen implantation doses, 8 × 10^15, 2 × 10^16, and 1 × 10^17 cm^-2. The experimental results show that this technology can affect the threshold voltage, channel hole mobility and output characteristics of the partially depleted SO1 PMOSFETs fabricated with the given material and process. For each type of the partially depleted SO1 PMOSFET with nitrided buried oxide, the absolute value of the average threshold voltage increases due to the nitrogen implantation. At the same time, the average channel hole mobility decreases because of the nitrogen implantation. In particular, with the high nitrogen implantation doses, the output characteristic curves of the tested transistors present a distinct kink effect, which normally exists in the characteristic output curves of only partially depleted SO1 NMOSFETs.

著录项

相似文献

  • 中文文献
  • 外文文献
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号