Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors

麻芃; 金智; 郭建楠; 潘洪亮; 刘新宇; 叶甜春; 王鸿; 王冠中

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Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors

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We report the dc and rf performance of graphene rf field-effect transistors,where the graphene films are grown on copper by using the chemical vapour deposition (CVD) method and transferred to SiO2/Si substrates.Composite materials,benzocyclobutene and atomic layer deposition Al2O3 are used as the gate dielectrics.The observation of n- and p-type transitions verifies the ambipolar characteristics in the graphene layers.While the intrinsic carrier mobility of CVD graphene is extracted to be 1200cm2/V·s,the parasitic series resistances are demonstrated to have a serious impact on device performance.With a gate length of 1 μm and an extrinsic transconductance of 72 mS/mm,a cutoff frequency of 6.6 GHz and a maximum oscillation frequency of 8.8 GHz are measured for the transistors,illustrating the potential of the CVD graphene for rf applications.

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来源
《中国物理快报：英文版》 |2012年第5期|205-208|共4页
作者
麻芃; 金智; 郭建楠; 潘洪亮; 刘新宇; 叶甜春; 王鸿; 王冠中;
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作者单位

Department of Microwave IC;

Institute of Microelectronics;

Chinese Academy of Sciences;

Beijing 100029;

Hefei National Laboratory for Physical Sciences at Microscale;

and Department of Physics;

University of Science and Technology of China;

Hefei 230026;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
SiO2/Si; vapour; transferred;

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Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors

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