High Performance Polymer Field-Effect Transistors Based on Thermally Crosslinked Poly(3-hexylthiophene)

姜春霞; 杨小艳; 赵恺; 吴晓明; 杨利营; 程晓曼; 魏军; 印寿根

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High Performance Polymer Field-Effect Transistors Based on Thermally Crosslinked Poly(3-hexylthiophene)

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The performance of polymer field-effect transistors is improved by thermal crosslinking of poly(3-hexylthiophene),using ditert butyl peroxide as the crosslinker.The device performance depends on the crosslinker concentration significantly.We obtain an optimal on/off ratio of 105 and the saturate field-effect mobility of 0.34 cm2V−1s−1,by using a suitable ratios of ditert butyl peroxide,0.5 wt%of poly(3-hexylthiophene).The microstructure images show that the crosslinked poly(3-hexylthiophene)active layers simultaneously possess appropriate crystallinity and smooth morphology.Moreover,crosslinking of poly(3-hexylthiophene)prevents the transistors from large threshold voltage shifts under ambient bias-stressing,showing an advantage in encouraging device environmental and operating stability.

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《中国物理快报：英文版》 |2011年第11期|264-267|共4页
作者
姜春霞; 杨小艳; 赵恺; 吴晓明; 杨利营; 程晓曼; 魏军; 印寿根;
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作者单位

Key Laboratory of Display Materials and Photoelectric Devices(Ministry of Education);

Tianjin University of Technology;

Tianjin 300384;

Institute of Material Physics;

and Tianjin Key Laboratory for Photoelectric Materials and Devices;

Tianjin University of Technology;

Tianjin 300384;

Singapore Institute of Manufacturing Technology;

71 Nanyang Drive;

Singapore;

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原文格式 PDF
正文语种 chi
中图分类高分子化学（高聚物）;
关键词
stability; morphology; thiophene;

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High Performance Polymer Field-Effect Transistors Based on Thermally Crosslinked Poly(3-hexylthiophene)

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