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首页> 中文期刊> 《中国物理快报：英文版》 >Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates

Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates

         
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摘要

Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator(TR-SOI) substrates are studied. It is found that the resistivity of the trap-rich layer of generation 2(TR-G2)is higher than that of generation 1(TR-G1), although the crystal morphologies of the trap rich layers are the same. In addition, the rf performance of two-generation TR-SOI substrates is investigated by coplanar waveguide lines and inductors. The results show that both the rf loss and the second harmonic distortion of TR-G2 are smaller than those of TR-G1. These results can be attributed to the higher resistivity values of both the trap-rich layer and the high-resistivity silicon(HR-Si) substrate of TR-G2. Moreover, the rf performance of the TR-SOI substrate with thicker buried oxide is slightly better. The second harmonics of various TR-SOI substrates are simulated and evaluated with the harmonic quality factor model as well. It can be predicted that the TR-SOI substrate will see further improvement in rf performance if the resistivities of both the trap-rich layer and HR-Si substrate increase.

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