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《中国物理快报：英文版》
>A New Method for Thin Film Deposition-Faced Microwave Electron Cyclotron Resonance Plasma Sources Enhanced Direct-Current Magnetron Sputtering
A New Method for Thin Film Deposition-Faced Microwave Electron Cyclotron Resonance Plasma Sources Enhanced Direct-Current Magnetron Sputtering
A new reactive magnetron sputtering system enhanced by the faced microwave electron cyclotron resonance plasma source was designed and amorphous CN_(x) films has been prepared by using this system.The character ization of the films by interference microscopy,atomic force microscopy,and x-ray photoelectron spectroscopy shows that the deposition rate is strongly affected by the direct-current bias,and the films are composed by a single carbon nitride phase and the N/C ratio is 4:3.2,which is close to that of C_(3)N_(4)(4:3).
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机译：Low temperature sputter-deposition of Ni-Zn ferrite thin-films using electron-cyclotron-resonance microwave plasma - soft magnetic backlayer for spinel ferrite thin-film perpendicular magnetic recording media
机译：The structural and dielectric properties of SiOx/a-C,F/SiOx multi-layer thin films deposited by microwave electron cyclotron resonance plasma method
