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Heteroepitaxial Growth of Single-Crystalline Diamond Film

         

摘要

Using high temperature heteroepitaxial growth method the single-crystalline diamond film growth conditions have been studied by Raman spectrum and transmission electron diffraction.High temperature,low alcohol concentration,slow gas flow velocity,long epitaxial time and substrate located near the gas exit side on the susceptor are the favourable conditions for growing single-crystalline diamond film.

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