Thermal Conversion of Semi-insulating GaAs due to Gallium Vacancies and Anti-structure Disorders

WENG Yumin; ZHENG Qingping; FAN Zhineng; ZONG Xiangfu

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Thermal Conversion of Semi-insulating GaAs due to Gallium Vacancies and Anti-structure Disorders

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Rapid thermal annealing induced acceptor levels and their annealing behavior in semi-insulating GaAs were investigated using the photoluminescence technique.Results suggest that the introduction of excess of Vg„and Gax»related acceptors might lead to thermal conversion of GaAs wafers.

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《中国物理快报：英文版》 |1992年第7期|375-378|共4页
作者
WENG Yumin; ZHENG Qingping; FAN Zhineng; ZONG Xiangfu;
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作者单位

Institute of Materials Science;

Fudan University;

Shanghai 200433;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
technique; annealing; thermal;

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Thermal Conversion of Semi-insulating GaAs due to Gallium Vacancies and Anti-structure Disorders

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