Theoretical Revision and Experimental Comparison of Quantum Yield for Transmission-Mode GaAlAs/GaAs Photocathodes

石峰; 张益军; 程宏昌; 赵静; 熊雅娟; 常本康

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Theoretical Revision and Experimental Comparison of Quantum Yield for Transmission-Mode GaAlAs/GaAs Photocathodes

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The quantum yield formula for uniform-doping GaAIAs/GaAs transmission-mode photocathodes is revised by taking into account the light absorption in the window layer.By using the revised quantum yield formula,the domestic and ITT's experimental quantum yield curves are fitted and the fitted curves match well with the experimental curves.In addition,the fit results show that the integral sensitivity and quantum yield of domestic image intensifier tube has achieved 2130μA/lm and 45%,nearly reaching ITT's third generation level in 2002,whereas the discrepancy in cathode performance is mainly embodied in the electron diffusion length and back interface recombination velocity.

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来源
《中国物理快报：英文版》 |2011年第4期|105-107|共3页
作者
石峰; 张益军; 程宏昌; 赵静; 熊雅娟; 常本康;
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作者单位

Institute of Electronic Engineering and Optoelectronic Technology;

Nanjing University of Science and Technology;

Nanjing 210094;

North Night Vision Technology Group Co.;

LTD;

Xi’an 710056;

Key Laboratory of Low Light Level Technology of COSTIND;

Xi’an 710065;

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原文格式 PDF
正文语种 chi
中图分类理论物理学;
关键词
quantum; fitted; revised;

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3. Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy [J] . 张益军 ,常本康 ,杨智 . 中国物理：英文版 . 2009,第10期
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Theoretical Revision and Experimental Comparison of Quantum Yield for Transmission-Mode GaAlAs/GaAs Photocathodes

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