A simple method to determine the traps' density of state(DOS) in organic light-emitting diodes(OLEDs) by manipulating the current-voltage(Ⅰ-Ⅴ) characteristic of the devices at room temperature is introduced.In particular,the trap-dependent space-charge limited current formula is simplified to obtain effective density of traps.In this study,poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)](F8BT) and 2-Methoxy-5-(3',7'-dimethyloctyloxy) benzene-1,4-diacetonitrile(OC_1C_(10)-PPV) are selected as the OLEDs emissive layer.The trap DOS of F8BT- and OC_1C_(10)-PPV-based OLEDs are calculated in the magnitudes of 10^(24)m^(-3)and 10^(23)m^(-3),respectively.In addition,the results agree with the other conventional method which is used to determine the trap DOS in OLEDs.This calculation technique may serve as a robust and reliable approach to obtain the trap DOS in OLEDs at room temperature.
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