Porous Structures and Short-Wavelength Photoluminescence of C^(+)-Implanted SiO_(2) Films

赵俊; 茅东升; 丁星兆; 林梓鑫; 江炳尧; 俞跃辉; 杨根庆; 柳襄怀; S.Jin; H.Bender

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Porous Structures and Short-Wavelength Photoluminescence of C^(+)-Implanted SiO_(2) Films

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C ions of three different energies were sequentially implanted into SiO_(2) films grown by plasma enhanced chemical vapor deposition.Microstructures of the samples were studied with transmission electron microscopy(TEM)and secondary ion mass spectroscopy As revealed by cross-sectional TEM,porous structures had been created in the implanted region during ion implantation.No photoluminescence(PL)was detected from the as-implanted samples.However,intense short-wavelength PL peaking at 360-370nm and ~450nm was observed from the annealed samples.The blue light from samples excited by an Xe lamp can be observed by naked eyes at room temperature.The light emission mechanisms are briefly discussed.

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《中国物理快报：英文版》 |1999年第5期|361-363|共3页
作者
赵俊; 茅东升; 丁星兆; 林梓鑫; 江炳尧; 俞跃辉; 杨根庆; 柳襄怀; S.Jin; H.Bender;
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作者单位

Ion Beam Laboratory;

Shanghai Institute of Metallurgy;

Chinese Academy of Sciences;

Shanghai 200050;

State Key Laboratory of Transducer Technology;

Shanghai Institute of Metallurgy;

Chinese Academy of Sciences;

Shanghai 200050;

IMEC;

Kapeldreef;

B-3001;

Leuven;

Belgium;

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原文格式 PDF
正文语种 chi
中图分类中国工业经济;
关键词
temperature.; deposition.; sectional;

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Porous Structures and Short-Wavelength Photoluminescence of C^(+)-Implanted SiO_(2) Films

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