Epitaxial LiNbO_(3)(LNO)films are grown on n−type GaN semiconductor substrates,forming LNO/GaN p-n junctions.The current-voltage(I–V)and capacitance−voltage(C–V)characteristics of the junctions are studied.The I–V curve shows a clear rectifying property with a turn−on voltage of 2.4 V.For the forward voltages,the conduction mechanism transits from Schottky thermionic emission for low voltages to space-charge-limited current for large voltages.Reverse C–V characteristics exhibit a linear 1/C2 versus V plot,from which a built-in potential of 0.34 V is deduced.These results are explained using the energy-band structure of the LNO/GaN junction.
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机译：Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $hbox{p}^{+}hbox{n}$ Diodes Formed on GaN Free-Standing Substrates
