P-type semiconducting polycrystalline diamond thin films doped with boron were synthesized on single crystalline silicon substrate by thermal chemical vapor deposition from a tungsten filament and placing boron-contained substance(boron nitride or elemental boron)on sample holder.The films were determined to be the high quality diamond by Raman spectroscopy,X-ray diffraction and scanning electron microscope measurements.The doping properties of boron were measured by Hall method and infrared absorption.
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机译：Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor
