High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100 nm

著录项

• 来源
  《中国物理快报：英文版》 |2008年第11期|4174-4176|共3页
• 作者

  吕士龙; 宋志棠; 张挺; 封松林;

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• 作者单位

  Nanotechnology Laboratory;

  Research Center of Functional Semiconductor Film Engineering and Technology;

  Shanghai Institute of Micro-system and Information Technology;

  Chinese Academy of Seiences~ Shanghai 200050;

  Graduate School of the Chinese Academy of Sciences;

  Beijing 100049;

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• 原文格式 PDF
• 正文语种 chi
• 中图分类 物理学;
• 关键词

  低能耗相位; SiSb; 薄膜; 电极;