首页> 中文期刊> 《中国物理快报:英文版》 >Surface Morphology Improvement of Non-Polar a-Plane Ga N Using a Low-Temperature GaN Insertion Layer

Surface Morphology Improvement of Non-Polar a-Plane Ga N Using a Low-Temperature GaN Insertion Layer

         

摘要

We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N are growth temperature and growth time of the Ga N insertion layer.The root-mean-square roughness of a-plane Ga N is reduced by 75%compared to the sample without the Ga N insertion layer.Meanwhile,the Ga N insertion layer is also beneficial for improving crystal quality.This work provides a simple and effective method to improve the surface morphology of non-polar a-plane Ga N.

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