Electric and Magnetic Field Tunable Rectification and Magnetoresistance in FexGe1−x/Ge Heterojunction Diodes

秦羽丰; 颜世申; 康仕寿; 萧淑琴; 李强; 代正坤; 沈婷婷; 代由勇; 刘国磊; 陈延学; 梅良模; 张泽

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Electric and Magnetic Field Tunable Rectification and Magnetoresistance in FexGe1−x/Ge Heterojunction Diodes

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FexGe1−x/Ge amorphous heterojunction diodes with p-FexGe1−x ferromagnetic semiconductor layers are grown on single-crystal Ge substrates of p-type,n-type and intrinsic semiconductors,respectively.The I–V curves of p−Fe_(0.4)Ge_(0.6)/p−Ge diodes only show slight changes with temperature or with magnetic field.For the p-Fe_(0.4)Ge_(0.6)/n−Ge diode,good rectification is maintained at room temperature.More interestingly,the I–V curve of the p−Fe0.4Ge0.6/i-Ge diode can be tuned by the magnetic field,indicating a large positive magnetoresistance.The resistances of the junctions decrease with the increasing temperature,suggesting a typical semiconductor transport behavior.The origin of the positive magnetoresistance is discussed based on the effect of the electric and magnetic field on the energy band structures of the interface.

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来源
《中国物理快报：英文版》 |2011年第10期|220-223|共4页
作者
秦羽丰; 颜世申; 康仕寿; 萧淑琴; 李强; 代正坤; 沈婷婷; 代由勇; 刘国磊; 陈延学; 梅良模; 张泽;
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作者单位

School of Physics;

and National Key Laboratory of Crystal Materials;

Shandong University;

Jinan 250100;

Department of Physics;

School of Information;

Shandong Agricultural University;

Taian 271018;

Department of Materials Science and Engineering;

Zhejiang University;

Hangzhou 310027;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
temperature; diodes; heterojunction;

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Electric and Magnetic Field Tunable Rectification and Magnetoresistance in FexGe1−x/Ge Heterojunction Diodes

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