退出
我的积分:
中文文献批量获取
外文文献批量获取
张贤高; 陈坤基; 方忠慧; 钱昕晔; 刘广元; 江小帆; 马忠元; 徐骏; 黄信凡; 计建新; 何飞; 宋矿宝; 张俊; 万辉; 王荣华;
National Laboratory of Solid State Microstructures and Department of Physics;
Nanjing University;
Nanjing 210093;
Wuxi China Resources Huajing Micro Electronics Co. Ltd.;
Wuxi 214061;
非易失性存储器; 氮化处理; 硅纳米晶; 电荷存储; 离散; 纳米硅薄膜; 隧道氧化层; 存储设备;
机译:Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer
机译:Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition
机译:Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si~(+) implantation and annealing
机译:A-Si:H TFT Nonvolatile Memories和刚性和柔性电子的铜互连
抱歉,该期刊暂不可订阅,敬请期待!
目前支持订阅全部北京大学中文核心(2020)期刊目录。