Precipitation behaviors of Cu and Ni on Frank-type partial dislocations in Czochralski-grown silicon are investigated.It is found that Cu develops precipitate colonies in the region away from Frank,partials and does not decorate Frank partials when the specimens are cooled slowly^while Ni decorates thein although the concen-tration of Ni is lower than that of Cu in the specimens.The results indicate that Ni impurity is easier to decorate Frank partials than Cu impurity in Si.
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