首页> 中文期刊> 《中国物理快报:英文版》 >Electrical Characteristics and Microstructures of Sm2O-Doped Bi4Ti3O12 Ceramics

Electrical Characteristics and Microstructures of Sm2O-Doped Bi4Ti3O12 Ceramics

         

摘要

We investigate the electrical properties of Sm-doped Bi4-xSmx Ti3O12 (BST) ceramics prepared by a conventional electroceramic technique. The x-ray diffraction analysis reveals the Bi-layered perovskite structure in all samples. The SEM micrographs show randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0, the current-voltage characteristics exhibit negative differential resistance behaviour and the P-V hysteresis loops are characterized by large leakage current, whereas for the samples with x=0.6 and 0.8, the current-voltage characteristics show simple ohmic behaviour and the P-V hysteresis loops are of the saturated and undistorted hysteresis. The remanent polarization and coercive field of the BST ceramic with x=0.8 are above 32μC/cm^2 and 70 kV/cm, respectively.

著录项

相似文献

  • 中文文献
  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号