Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode

李亚节; 王嘉琪; 郭露; 陈光灿; 李召松; 于红艳; 周旭亮; 王火雷; 陈娓兮; 潘教青

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Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode

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We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.

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《中国物理快报：英文版》 |2018年第4期|38-41|共4页
作者
李亚节; 王嘉琪; 郭露; 陈光灿; 李召松; 于红艳; 周旭亮; 王火雷; 陈娓兮; 潘教青;
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作者单位

Key Laboratory of Semiconductor Materials Science;

Institute of Semiconductors;

Chinese Academy of Sciences;

Beijing 100083;

College of Materials Science and Opto-Electronic Technology;

University of Chinese Academy of Sciences;

Beijing 100049;

Department of Applied Physics and Materials Science;

California Institute of Technology;

California 91125;

USA;

State Key Laboratory for Mesoscopic Physics;

School of Physics;

Peking University;

Beijing 100871;

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原文格式 PDF
正文语种 chi
中图分类激光器;
关键词
混合集成; 二极管; DFB; 通道; 激光; 双稳态; 电压范围; 操作;

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Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode

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