Positron lifetime spectra were measured for the Zn-doped p-type GaAs.In comparing the horizontal-Bridgman-method-grown and the floating-zone-method grown p-type GaAs with the liquid-encapsulation-Czochralski-grown p-type GaAs samples,positron trapping into vacancy type defects was observed in the former two grown p-type GaAs.Shallow positron traps were detected,and the dominant ones were attributed to acceptor the in p-type GaAs.
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