Silicon single crystals with a SiO_(2) overlayer of various thicknesses(1000-6000Å)were implanted by 120 and 160keV Si-ions to doses in a range of(0.5-1.0)×10^(17)cm^(-2) to study the visible light emission in their as-implanted and post-annealed states.An emission band peaked around 2.0eV was visible in the photoluminescence(PL)spectra of all the as-implanted samples.After post-annealing at 1100℃ in a flowing N_(2) gas,it was found that a visible band peaked in the range of 1.7eV is detectable from all the samples and that the PL intensity exihibits a correlation with the oxygen concentration in the implanted region.Possible mechanisms responsible for the observed light emission were also discussed.
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