Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs

郑齐文; 崔江维; 魏莹; 余学峰; 陆妩; 任迪远; 郭旗

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Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs

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The bias dependence of radiation-induced narrow-width channel effects(RINCEs) in 65-nm n-type metal-oxidesemiconductor field-effect transistors(NMOSFETs) is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.

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《中国物理快报：英文版》 |2018年第4期|74-77|共4页
作者
郑齐文; 崔江维; 魏莹; 余学峰; 陆妩; 任迪远; 郭旗;
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作者单位

Key Laboratory of Functional Materials and Devices for Special Environments;

Xinjiang Technical Institute of Physics and Chemistry;

Chinese Academy of Sciences;

Urumqi 830011;

Xinjiang Key Laboratory of Electronic Information Material and Device;

Urumqi 830011;

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原文格式 PDF
正文语种 chi
中图分类场效应器件;
关键词
NMOSFET; 隧道; 狭窄; 宽度; 放射; 偏导; 阀值电压; 晶体管;

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Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs

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