Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells

Rui Wu; Jun-Ling Wang; Gang Yan; Rong Wang

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Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells

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Photoluminescence (PL) measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0,1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 1015,1 × 1015 and 3 × 1014 cm-2,respectively.The degradation rates of PL intensity increase with the electron fluence and energy.Furthermore,the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency.The damage coefficient increases with the electron energy.The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss (NIEL),which shows a quadratic dependence between damage coefficient and NIEL.

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《中国物理快报：英文版》 |2018年第4期|70-73|共4页
作者
Rui Wu; Jun-Ling Wang; Gang Yan; Rong Wang;
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Key Laboratory of Beam Technology and Materials Modification(Ministry of Education),College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

Key Laboratory of Beam Technology and Materials Modification(Ministry of Education),College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

Key Laboratory of Beam Technology and Materials Modification(Ministry of Education),College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

Key Laboratory of Beam Technology and Materials Modification(Ministry of Education),College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

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Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells

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