首页> 中文期刊> 《中国物理快报:英文版》 >Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors

Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors

         

摘要

Benefitting from the higher quantum efficiency and sensitivity compared with the front-side illumination (FSI) CMOS image sensors (CISs),backside illumination (BSI) CMOS image sensors tend to replace CCDs and FSI CISs for space applications.However,the radiation damage effects and mechanisms of BSI CISs in the radiation environment are not well understood.We provide radiation effects due to 3 MeV proton irradiations of BSI CISs dedicated to imaging by the analyses of mean dark current increase,dark current nonuniformity and full well capacity in pixel arrays and isolated photodiodes.Additionally,the present annealing certifies the radiationinduced defects,which are responsible for the parameter degradations in BSI CISs.

著录项

  • 来源
    《中国物理快报:英文版》 |2018年第7期|33-36|共4页
  • 作者单位

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

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  • 正文语种 eng
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