首页> 中文期刊> 《中国物理快报:英文版》 >Radiation Damage Analysis of Individual Subcells for GaInP/GaAs/Ge Solar Cells Using Photoluminescence Measurements

Radiation Damage Analysis of Individual Subcells for GaInP/GaAs/Ge Solar Cells Using Photoluminescence Measurements

         

摘要

The radiation damage of three individual subcells for GaInP/GaAs/Ge triple-junction solar cells irradiated with electrons and protons is investigated using photoluminescence (PL) measurements.The PL spectra of each subcell are obtained using different excitation lasers.The PL intensity has a fast degradation after irradiation,and decreases as the displacement damage dose increases.Furthermore,the normalized PL intensity varying with the displacement damage dose is analyzed in detail,and then the lifetime damage coefficients of the recombination centers for GaInP top-cell,GaAs mid-cell and Ge bottom-cell of the triple-junction solar cells are determined from the PL radiative efficiency.

著录项

  • 来源
    《中国物理快报:英文版》 |2017年第2期|63-66|共4页
  • 作者单位

    Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

    Beijing Radiation Center, Beijing 100875;

    Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

    Beijing Radiation Center, Beijing 100875;

    Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

    Beijing Radiation Center, Beijing 100875;

    Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

    Beijing Radiation Center, Beijing 100875;

    Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

    Beijing Radiation Center, Beijing 100875;

  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号