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首页> 中文期刊> 《中国物理快报：英文版》 >Modelling Magnetoresistance Effect in Limited Anisotropic Semiconductors

Modelling Magnetoresistance Effect in Limited Anisotropic Semiconductors

         
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摘要

A macroscopic model of the magnetoresistance effect in limited anisotropic semiconductors is built.This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and films.Based on a unified mathematical model the method is worked out enabling us to measure tensor components of the specific electrical resistance and the relative magnetoresistance of anisotropic semiconductors simultaneously.

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  • 来源
    《中国物理快报：英文版》 |2017年第7期|212-214|共3页
  • 作者

    Filippov V.V.; Mitsuk S.V.;

  • 作者单位

    Lipetsk State Pedagogical University of P.P.Semenov-Tyan-Shansky, Lipetsk 398020, the Russian Federation;

    Lipetsk State Technical University, Lipetsk 398600, the Russian Federation;

    Lipetsk State Pedagogical University of P.P.Semenov-Tyan-Shansky, Lipetsk 398020, the Russian Federation;

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