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A High-Sensitivity Terahertz Detector Based on a Low-Barrier Schottky Diode

         

摘要

A low-barrier Schottky barrier diode based on the InGaAs/InP material system is designed and fabricated with a new non-destructive dry over-etching process.By using this diode,a high-sensitivity waveguide detector is proposed.The measured maximum responsivity is over 2000 m V/m W at 630 GHz.The measured noise effective power (NEP) is less than 35pW/Hz0.5 at 570-630GHz.The minimum NEP is 14pW/Hz0.5 at 630GHz.The proposed high-sensitivity waveguide detector has the characteristics of simple structure,compact size,low cost and high performance,and can be used in a variety of applications such as imaging,molecular spectroscopy and atmospheric remote sensing.

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  • 来源
    《中国物理快报:英文版》 |2017年第7期|47-50|共4页
  • 作者单位

    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029;

    School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731;

    School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731;

    School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731;

    School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731;

    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029;

    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029;

    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029;

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  • 正文语种 eng
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