首页> 中文期刊> 《中国物理快报:英文版》 >Enhanced Luminescence of InGaN-Based 395 nm Flip-Chip Near-Ultraviolet Light-Emitting Diodes with A1 as N-Electrode

Enhanced Luminescence of InGaN-Based 395 nm Flip-Chip Near-Ultraviolet Light-Emitting Diodes with A1 as N-Electrode

         

摘要

High-reflectivity Al-based n-electrode is used to enhance the luminescence properties of InGaN-based 395nm flip-chip near-ultraviolet (UV) light-emitting diodes.The Al-only metal layer could form the Ohmic contact on the plasma etched n-GaN by means of chemical pre-treatment,with the lowest specific contact resistance of 2.211 × 10-5 Ω.cm2.The A1 n-electrodes enhance light output power of the 395 nm flip-chip near-UV light-emitting diodes by more than 33% compared with the Ti/A1 n-electrodes.Meanwhile,the electrical characteristics of these chips with two types of n-electrodes do not show any significant discrepancy.The near-field light distribution measurement of packaged chips confirms that the enhanced luminescence is ascribed to the high reflectivity of the Al electrodes in the UV region.After the accelerated aging test for over 1000 h,the luminous degradation of the packaged chips with Al n-electrodes is less than 3%,which proves the reliability of these chips with the Al-based electrodes.Our approach shows a simplified design and fabrication of high-reflectivity n-electrode for flip-chip near-UV light emitting diodes.

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  • 来源
    《中国物理快报:英文版》 |2017年第7期|114-117|共4页
  • 作者单位

    Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074;

    Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074;

    Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074;

    Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074;

    Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074;

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