Experimental I-V and C-V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi2Contacts and Dopant Segregation

Yi-Ze Wang; Chang Liu; Jian-Hui Cai; Qiang Liu; Xin-Ke Liu; Wen-Jie Yu; Qing-Tai Zhao

首页> 中文期刊> 《中国物理快报：英文版》 >Experimental I-V and C-V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi2Contacts and Dopant Segregation

Experimental I-V and C-V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi2Contacts and Dopant Segregation

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We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors (SBMOSFETs) fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process.The subthreshold swing of such SB-MOSFETs reaches 69mV/dec.Emphasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs.According to the measurements of gate-to-source capacitance Cgs with respect to Vgs at various Vds,we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel.At each Cgs peak,the difference between Vgs and Vds is equal to the Schottky barrier height (SBH) for NiSi2 on highly doped silicon,which indicates that the critical condition of channel pinching off is related with SBH for source/drain on channel.The SBH for NiSi2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.

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《中国物理快报：英文版》 |2017年第7期|275-278|共4页
作者
Yi-Ze Wang; Chang Liu; Jian-Hui Cai; Qiang Liu; Xin-Ke Liu; Wen-Jie Yu; Qing-Tai Zhao;
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State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

University of Chinese Academy of Sciences, Beijing 100049;

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

Peter Grünberg Institute 9, JARA-FIT, Forschungszentrum Jülich, Jülich 52425, Germany;

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

College of Sciences, Shanghai University, Shanghai 200444;

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

College of Sciences, Shanghai University, Shanghai 200444;

College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060;

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

Peter Grünberg Institute 9, JARA-FIT, Forschungszentrum Jülich, Jülich 52425, Germany;

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Experimental I-V and C-V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi2Contacts and Dopant Segregation

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