Total Ionizing Dose Response of Different Length Devices in 0.13 μm Partially Depleted Silicon-on-Insulator Technology

著录项

• 来源
  《中国物理快报：英文版》 |2017年第8期|144-147|共4页
• 作者

  Meng-Ying Zhang; Zhi-Yuan Hu; Zheng-Xuan Zhang; Shuang Fan; Li-Hua Dai; Xiao-Nian Liu; Lei Song;

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• 作者单位

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

  University of Chinese Academy of Sciences, Beijing 100049;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

  University of Chinese Academy of Sciences, Beijing 100049;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

  University of Chinese Academy of Sciences, Beijing 100049;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

  University of Chinese Academy of Sciences, Beijing 100049;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

  University of Chinese Academy of Sciences, Beijing 100049;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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