Effect of Metal Contact and Rapid Thermal Annealing on Electrical Characteristics of Graphene Matrix

S.Fahad; M.Ali; S.Ahmed; S.Khan; S.Alam; S.Akhtar

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Effect of Metal Contact and Rapid Thermal Annealing on Electrical Characteristics of Graphene Matrix

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Development of graphene field effect transistors (GFETs) faces a serious challenge of graphene interface to the dielectric material.A single layer of intrinsic graphene has an average sheet resistance of the order of 1-5 kΩ/□.The intrinsic nature of graphene leads to higher contact resistance yielding into the outstanding properties of the material.We design a graphene matrix with minimized sheet resistance of 0.185 Ω/□ with Ag contacts.The developed matrices on silicon substrates provide a variety of transistor design options for subsequent fabrication.The graphene layer is developed over 400 nm nickel in such a way as to analyze hypersensitive electrical properties of the interface for exfoliation.This work identifies potential of the design in the applicability of few-layer GFETs with less process steps with the help of analyzing the effect of metal contact and post-process annealing on its electrical fabrication.

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《中国物理快报：英文版》 |2017年第10期|65-69|共5页
作者
S.Fahad; M.Ali; S.Ahmed; S.Khan; S.Alam; S.Akhtar;
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作者单位

Advanced Electronics Laboratories, International Islamic University Islamabad, Pakistan;

Advanced Electronics Laboratories, International Islamic University Islamabad, Pakistan;

Advanced Electronics Laboratories, International Islamic University Islamabad, Pakistan;

Advanced Electronics Laboratories, International Islamic University Islamabad, Pakistan;

Advanced Electronics Laboratories, International Islamic University Islamabad, Pakistan;

Department of Physics, Federal Urdu University of Arts, Sciences & Technology, Karachi, Pakistan;

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Effect of Metal Contact and Rapid Thermal Annealing on Electrical Characteristics of Graphene Matrix

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